Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof
US6627473B1 · kind B1 · utility
117Cited by
6References
22Claims
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Key dates
| Filing date | Nov 14, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Nov 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4735
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transitor has a channel layer overlain by an electron supply layer held in contact with a gate electrode, and source/drain electrodes form ohmic contact together with cap layers, and resistive etching stopper are inserted between the cap layers and the electron supply layers for preventing the electron supply layer from over-etching, wherein extremely thin delta-doped layers are formed between the etching stopper layers and the electron supply layer so that the resistance between the electron supply layer and the source/drain electrodes are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.