Method of stripping photoresist using alcohols
US6627588B1 · kind B1 · utility
4Cited by
13References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A liquid cleaning composition and method for removal of photoresist including an aliphatic alcohol. Preferably, the alcohol is isopropyl alcohol. Additionally, an alcohol/base mixture can be used to remove photoresist, rather than alcohol used alone. Preferably, the alcohol is isopropyl alcohol, while the aqueous base is ammonium hydroxide. The temperature conditions range from about 25 degrees C. to about 70 degrees C. The pressure conditions range from about 14 pounds per square inch to about 100 pounds per square inch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.