Ferroelectric thin film capacitors having multi-layered crystallographic textures

US6627930B1 · kind B1 · utility

Assignee

• FUJITSU LIMITED · JP

Inventors

• Glen Fox · Colorado Springs, US
• Fan Chu · Colorado Springs, US
• Brian Eastep · Colorado Springs, US
• Shan Sun · Wingdale, US

Key dates

• Filing date: Mar 14, 2000
• Grant date: Sep 30, 2003
• Expiry date: Mar 14, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/684

Abstract

A ferroelectric thin film capacitor and a method for producing the same wherein the capacitor dielectric includes multi-layered crystallographic textures. An integrated circuit device, such as a non-volatile memory device, includes at least one capacitor having a top and bottom electrode thereof and a ferroelectric dielectric layer therebetween. The ferroelectric dielectric layer comprises a first ferroelectric layer having a first crystallographic texture forming a main body of the dielectric layer and a second ferroelectric layer having a second differing crystallographic texture forming an interface layer between the main body and one of the top and bottom electrodes.