Patent · US Expired

Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure

US6627970B2 · kind B2 · utility

15Cited by

15References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert A. Fuller · Gilbert, US
Helmut Schneider · Hersbruck, DE

Key dates

Filing date	Dec 20, 2000
Grant date	Sep 30, 2003
Priority date	—
Expiry date	Dec 20, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure is described. The antifuse structure is located within an insulated well composed of semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.