Semiconductor memory device capable of driving non-selected word lines to first and second potentials
US6628564B1 · kind B1 · utility
31Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1999 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Jun 25, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a word line drive circuit resetting the word line by driving the word line connected to a memory cell and switching a reset level of the word line drive circuit at the time of the reset operation of the word line. Further, a semiconductor device includes a memory cell array formed by arranging a plurality of memory cells and a reset level switch circuit for selecting a first potential or a second potential and supplying the first potential or the second potential to the word line drive circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.