Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements
US6629879B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2001 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/076
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention is directed to a method of controlling polishing processes based upon x-ray fluorescence measurements. In one illustrative embodiment, the method comprises providing a wafer comprised of a layer of insulating material having a barrier metal layer formed thereabove and a layer of copper formed above the barrier metal layer, performing a chemical mechanical polishing operation to remove the barrier metal layer, irradiating at least one area of the wafer with x-rays, and analyzing x-rays leaving the irradiated area to determine the presence of material comprising the barrier metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.