Method for the production of an epitaxially grown semiconductor wafer

US6630024B2 · kind B2 · utility

Assignee

• Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

• Rudiger Schmolke · Burghausen, DE
• Reinhard Schauer · Laufen, DE
• Günther Obermeier · Palling, DE
• Dieter Graf · Burghausen, DE
• Peter Storck · Mehring, DE
• Klaus Messmann · Burghausen, DE
• Wolfgang Siebert · Mehring, DE

Key dates

• Filing date: May 24, 2001
• Grant date: Oct 7, 2003
• Expiry date: May 24, 2021

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/02
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:(a) preparing a substrate wafer having a polished front and a specific thickness;(b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and(c) depositing the epitaxial layer on the front of the pretreated substrate wafer.