Method to improve surface uniformity of a layer of arc used for the creation of contact plugs
US6630397B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Dec 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the objectives of the invention a new processing sequence is provided for the creation of a layer of ARC. A first layer of ARC is deposited over a supporting surface, a blanket etch is performed to the surface of the first layer of ARC, leaving any openings that have been created in the supporting surface essentially filled with ARC material. A second layer of ARC is next applied over the surface of the etched first layer of ARC, this second layer of ARC provides a layer of ARC that is of uniform thickness over the supporting surface. Steps of baking may be applied to each of the layers of ARC after these layers have been deposited or after the first layer of ARC has been etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.