Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6630433B2 · kind B2 · utility
21Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2000 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Mar 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.