InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
US6630695B2 · kind B2 · utility
15Cited by
5References
10Claims
0Family size
Inventors
Key dates
| Filing date | Jul 8, 2002 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Jul 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.