James Dong
3Patents
2h-index
4Co-inventors
30Inventor score
Filing activity: Jul 26, 2000 → Jan 14, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6630695B2 | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire | Electricity | 15 | Expired |
| US6495867B1 | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire | Electricity | 7 | Expired |
| US6972333B2 | Preparation of quinacridonequinones and substituted derivatives of same | Chemistry; Metallurgy | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.