Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays
US6632536B2 · kind B2 · utility
2Cited by
8References
13Claims
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Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Jun 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.