Enhance the process window of memory cell line/space dense pattern in sub-wavelength process
US6632590B1 · kind B1 · utility
4Cited by
12References
17Claims
0Family size
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Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A new method is provided for the creation of densely patterned interconnect lines. As a first step of the invention, the mask layout is modified such that the ratio of line width (L) to line spacing (S) is sharply decreased. The line pattern that is created using this mask reflects the same sharp reduction in the ratio L/S. The width of the thus created lines is, as a second step of the invention, increased by the process of thermal flow while the spacing between the lines is concurrently decreased by the same amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.