Self-trimming method on looped patterns
US6632741B1 · kind B1 · utility
260Cited by
9References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2000 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of self-trimming pattern, includes forming a pattern containing a plurality of regular or irregular features within a first material deposited on a substrate, depositing a conformal layer of second material, and etching the second material to form spacers of the second material along the sidewalls of the features in the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.