Methods and apparatus for producing stable low k FSG film for HDP-CVD
US6633076B2 · kind B2 · utility
11Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.