Optical proximity correction
US6634018B2 · kind B2 · utility
23Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Nov 4, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improvement to the optical proximity correction process used in photolithography. Mask pattern modeling is added to the optical proximity correction process, producing patterns that are optimized for both reticle manufacture and wafer fabrication. Pattern validation is improved by applying a mask pattern model and a wafer pattern model to the validation process. Reticle inspection is improved by adding a mask inspection tool model that comprehends the limitations of the inspection tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.