Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
US6634314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Aug 8, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45589
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.In another aspect, the present invention discloses a semiconductor device fabricating apparatus including: a plurality of susceptors on which the same number of substrates are respectively mounted; a reaction chamber isolating all the substrates on the plurality of susceptors from an exterior condition; a plurality of vapor injection pipes disposed over the substrates, each vapor injection pipe relatively rotating with respect to the substrates and periodically applying a vapor substance onto each substrate; a plurality of exhausting portion each disposed near a corresponding susceptor to exhaust a rema…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.