Resist composition and patterning process
US6635400B2 · kind B2 · utility
11Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Apr 17, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0392
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition comprising (A) an alkali-insoluble or substantially insoluble polymer having acidic functional groups protected with acid labile groups, which polymer becomes alkali-soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a 1,2-naphthoquinonediazidosulfonyl group-bearing compound has a high resolution and sensitivity, and provides resist patterns of excellent plating resistance when used in UV lithography at an exposure light wavelength of at least 300 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.