Patent · US Expired

Metallizing method for dielectrics

US6635410B2 · kind B2 · utility

1Cited by

2References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Haussmann · Esslingen am Neckar, DE
Klaus Lowack · Erlangen, DE
Wolfgang Radlik · Munich, DE
Guenter Schmid · Hemhofen, DE
Recai Sezi · Simmerath, DE

Key dates

Filing date	May 28, 2002
Grant date	Oct 21, 2003
Priority date	—
Expiry date	May 28, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2203/0525
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.