Plate-through hard mask for MRAM devices

US6635496B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Xian Jay Ning · Shanghai, CN

Key dates

• Filing date: Oct 12, 2001
• Grant date: Oct 21, 2003
• Expiry date: Oct 12, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A method of fabricating an MRAM device includes patterning a magnetic stack material layer (142) using a herd mask (146) formed by a “plate-through” technique. A resist (144) is deposited over magnetic stack material (142), and the resist (144) is patterned, exposing regions of the magnetic stack material (142). A hard mask (146) is formed over the magnetic stack material (142) exposed regions through the resist (144), and the hard mask (146) is used to pattern magnetic tunnel junctions (MTJ's) of the MRAM device. Electroplating, electro-less plating, sputtering, physical vapor deposition (PVD), evaporation deposition, or combinations thereof are used to deposit a material comprising a metal over the magnetic stack material (142) exposed regions to form the hard mask (146).