Semiconductor device and method of manufacturing the same
US6635523B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1998 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Dec 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a tungsten film selectively on a surface of the semiconductor film by causing a tungsten compound gas to react with the semiconductor film, forming a tungsten nitride film by nitriding a surface of the tungsten film by using a nitrogen gas or a nitrogen containing gas, forming a capacitor dielectric film made of oxygen compound on the tungsten nitride film, annealing the capacitor dielectric film in an oxygen containing gas, and forming a capacitor upper electrode made of a conductive film on the capacitor dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.