Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof
US6635889B2 · kind B2 · utility
4Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jan 18, 2002 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Mar 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.