Semiconductor storage device
US6635913B2 · kind B2 · utility
7Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Dec 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
Abstract
The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.