Semiconductor device having buried boron and carbon regions, and method of manufacture thereof
US6635950B1 · kind B1 · utility
8Cited by
6References
8Claims
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Key dates
| Filing date | Sep 19, 2000 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Sep 19, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations.For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 &mgr;m is formed to a CZ semiconductor substrate implanted with boron ions which are dopant and carbon ions which are not a dopant is provided, and transistors are formed on the surface of the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.