Electrostatic chucks and process for producing the same
US6636413B2 · kind B2 · utility
2Cited by
1References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 4, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Dec 4, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic chuck including a dielectric layer made of aluminum nitride, an inner electrode buried in the dielectric layer, and a surface layer covering a surface of the dielectric layer. The surface layer is made of a material harder than the aluminum nitride constituting the dielectric layer and having a thickness of not less than 200 nm, and the surface of the dielectric layer has a center-line average surface roughness of not more than 25 nm. The electrostatic chuck is adapted to adsorb a wafer onto the dielectric layer through the surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.