Semiconductor laser device
US6636541B1 · kind B1 · utility
1Cited by
4References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3415
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.