Method for pitch reduction
US6638441B2 · kind B2 · utility
214Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | May 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for pitch reduction is disclosed. The method can form a pattern with a pitch ⅓ the original pitch formed by available photolithography technologies by only using one photo mask or one pattern transfer process, self-aligned etching back processes, and conventional deposition processes. By choosing appropriate layers to be deposited and etched, the pattern can be an etching mask or it can be a device structure itself.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.