Method for fabricating single-mode DBR laser with improved yield
US6638773B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jul 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1243
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength is formed. A grating is formed adjacent to the active region, the grating having a grating period corresponding to a Bragg wavelength substantially equal to the lasing wavelength. An intermediate section of the grating is removed to result in first and second pluralities of gratings separated by a gratingless intermediate section. First and second grating sections are formed comprising the first and second pluralities of gratings, where the first and second grating sections each have a first effective index of refraction. A gratingless phase-shift section is formed in said intermediate section, the phase-shift section being disposed adjacent to the active region and between the first and second grating sections and having a second index of refraction different than the first index of refraction. The phase-shift section has a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.