Film planarization for low-k polymers used in semiconductor structures
US6638878B2 · kind B2 · utility
10Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Nov 15, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a planarized dielectric layer upon a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer. A dielectric material is applied in a spin-on fashion upon the adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of less than 30 seconds. Then, the dielectric material is dried by baking without additional spinning of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.