Inventor · Clifton Park, NY, US

Shahab Siddiqui

54Patents
7h-index
85Co-inventors
75Inventor score

Filing activity: Oct 2, 2001 → Oct 15, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10106892B1 Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same Electricity 402 Active
US8421077B2 Replacement gate MOSFET with self-aligned diffusion contact Electricity 32 Active
US8373239B2 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric Electricity 23 Active
US9741720B1 Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices Electricity 14 Active
US6638878B2 Film planarization for low-k polymers used in semiconductor structures Emerging Cross-Sectional Technologies 10 Expired
US8836037B2 Structure and method to form input/output devices Electricity 7 Active
US8941177B2 Semiconductor devices having different gate oxide thicknesses Electricity 7 Active
US7531444B2 Method to create air gaps using non-plasma processes to damage ILD materials Electricity 6 Expired
US8952460B2 Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices Electricity 6 Active
US8159060B2 Hybrid bonding interface for 3-dimensional chip integration Electricity 6 Active
US9515164B2 Methods and structure to form high K metal gate stack with single work-function metal Electricity 5 Active
US7407554B2 Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent Emerging Cross-Sectional Technologies 5 Active
US8349729B2 Hybrid bonding interface for 3-dimensional chip integration Electricity 4 Active
US9087722B2 Semiconductor devices having different gate oxide thicknesses Electricity 4 Active
US9029959B2 Composite high-k gate dielectric stack for reducing gate leakage Electricity 3 Active
US9040369B2 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric Electricity 3 Active
US9741657B2 TSV deep trench capacitor and anti-fuse structure Electricity 3 Active
US8415772B2 Method to prevent surface decomposition of III-V compound semiconductors Electricity 3 Active
US7645694B2 Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent Emerging Cross-Sectional Technologies 3 Active
US8643115B2 Structure and method of Tinv scaling for high κ metal gate technology Electricity 3 Active
US11515427B2 Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance Electricity 2 Active
US9006064B2 Multi-plasma nitridation process for a gate dielectric Electricity 2 Active
US9224826B2 Multiple thickness gate dielectrics for replacement gate field effect transistors Electricity 2 Active
US9087784B2 Structure and method of Tinv scaling for high k metal gate technology Electricity 2 Active
US9673108B1 Fabrication of higher-K dielectrics Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.