Monolithically integrated solid-state SiGe thermoelectric energy converter for high speed and low power circuits
US6639242B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jul 1, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for a semiconductor structure that includes a substrate having at least one integrated circuit heat generating structure is disclosed. The invention has at least one integrated circuit cooling device on the substrate adjacent the heat generating structure. The cooling device is adapted to remove heat from the heat generating structure. The cooling device includes a cold region and a hot region. The cold region is positioned adjacent the heat generating structure. The cooling device has one of a silicon germanium super lattice structure. The cooling device also has a plurality of cooling devices that surround the heat generating structure. The cooling device includes a thermoelectric cooler.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.