Fen Chen
72Patents
9h-index
61Co-inventors
81Inventor score
Filing activity: Sep 20, 2000 → Oct 17, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6788093B2 | Methodology and apparatus using real-time optical signal for wafer-level device dielectrical reliability studies | Physics | 113 | Expired |
| US8053814B2 | On-chip embedded thermal antenna for chip cooling | Electricity | 45 | Active |
| US8847401B2 | Semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure | Electricity | 17 | Active |
| US7381981B2 | Phase-change TaN resistor based triple-state/multi-state read only memory | Electricity | 16 | Expired |
| US8563336B2 | Method for forming thin film resistor and terminal bond pad simultaneously | Electricity | 15 | Active |
| US6639242B1 | Monolithically integrated solid-state SiGe thermoelectric energy converter for high speed and low power circuits | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7571637B2 | Design structure for an on-chip real-time moisture sensor for and method of detecting moisture ingress in an integrated circuit chip | Physics | 13 | Active |
| US8405135B2 | 3D via capacitor with a floating conductive plate for improved reliability | Electricity | 11 | Active |
| US7345503B2 | Method and apparatus for impedance matching in transmission circuits using tantalum nitride resistor devices | Electricity | 10 | Active |
| US7084483B2 | Trench type buried on-chip precision programmable resistor | Electricity | 9 | Expired |
| US6790744B2 | Monolithically integrated solid-state sige thermoelectric energy converter for high speed and low power circuits | Emerging Cross-Sectional Technologies | 9 | Expired |
| US10126260B2 | Moisture detection and ingression monitoring systems and methods of manufacture | Electricity | 5 | Active |
| US8362794B2 | Method and system for assessing reliability of integrated circuit | Physics | 4 | Active |
| US9812359B2 | Thru-silicon-via structures | Electricity | 4 | Active |
| US10309919B2 | Moisture detection and ingression monitoring systems and methods of manufacture | Electricity | 4 | Active |
| US9891261B2 | Electromigration monitor | Electricity | 4 | Active |
| US7768815B2 | Optoelectronic memory devices | Physics | 4 | Active |
| US8779491B2 | 3D via capacitor with a floating conductive plate for improved reliability | Electricity | 4 | Active |
| US9093503B1 | Semiconductor chip with a dual damascene wire and through-substrate via (TSV) structure | Electricity | 4 | Active |
| US8569888B2 | Wiring structure and method of forming the structure | Electricity | 3 | Active |
| US7795679B2 | Device structures with a self-aligned damage layer and methods for forming such device structures | Electricity | 3 | Active |
| US8890556B2 | Real-time on-chip EM performance monitoring | Physics | 3 | Active |
| US9159671B2 | Copper wire and dielectric with air gaps | Electricity | 3 | Active |
| US7709401B2 | Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature | Emerging Cross-Sectional Technologies | 3 | Active |
| US8609504B2 | 3D via capacitor with a floating conductive plate for improved reliability | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.