Capacitor dielectric having perovskite-type crystalline structure
US6639267B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor construction includes an inner electrode, an inner dielectric layer over the inner electrode, an outer dielectric layer over the inner dielectric layer, and an outer electrode over the outer dielectric layer. The inner dielectric layer can include an oxidized alloy of at least two metals in a perovskite-type crystalline structure. The outer dielectric layer can include an oxide of a material wherein the material exhibits passivation against carbon and nitrogen reaction. As an example, the capacitor construction can further include a middle dielectric layer between the inner and outer dielectric layers. The middle dielectric layer can include an oxidized alloy of at least two metals in a perovskite-type crystalline structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.