Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor
US6639762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jun 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49043
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.