Method of fabricating a coated metallic wire, method of removing insulation from the coated metallic wire and method of fabricating a semiconductor device with the wire
US6640436B1 · kind B1 · utility
6Cited by
19References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2000 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Mar 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49192
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes removing a predetermined part of an insulative layer of a coated fine metallic wire by irradiating the predetermined part with a laser light and connecting the predetermined part of the fine metallic wire to one of the semiconductor device and a package of the semiconductor device. The insulative layer contains a substance that absorbs the laser light at a predetermined lasing wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.