Silicon single crystal, silicon wafer, and epitaxial wafer.
US6641888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Feb 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.