Sumitomo Mitsubishi Silicon Corporation
90Patents
12Active
90Granted
38Portfolio score
Filing activity: May 17, 2000 → Apr 13, 2010 · 11 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7329947B2 | Heat treatment jig for semiconductor substrate | Emerging Cross-Sectional Technologies | 532 | Expired |
| US7210925B2 | Heat treatment jig for silicon semiconductor substrate | Electricity | 456 | Expired |
| US7163393B2 | Heat treatment jig for semiconductor silicon substrate | Electricity | 455 | Expired |
| USRE38937E1 | Susceptor for vapor-phase growth apparatus | General | 296 | Expired |
| US6779159B2 | Defect inspection method and defect inspection apparatus | Physics | 42 | Expired |
| US7193724B2 | Method for measuring thickness of thin film-like material during surface polishing, and surface polishing method and surface polishing apparatus | Performing Operations; Transporting | 38 | Expired |
| US7029380B2 | Double-side polishing method and apparatus | Performing Operations; Transporting | 24 | Expired |
| US7470169B2 | Method of polishing semiconductor wafers by using double-sided polisher | Performing Operations; Transporting | 24 | Expired |
| US7456106B2 | Method for producing a silicon wafer | Electricity | 22 | Expired |
| US7253082B2 | Pasted SOI substrate, process for producing the same and semiconductor device | Electricity | 17 | Expired |
| US7397110B2 | High resistance silicon wafer and its manufacturing method | Electricity | 14 | Expired |
| US7648409B1 | Double side polishing method and apparatus | Performing Operations; Transporting | 14 | Expired |
| US6641888B2 | Silicon single crystal, silicon wafer, and epitaxial wafer. | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6830985B2 | Method and apparatus for producing bonded dielectric separation wafer | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7601603B2 | Method for manufacturing semiconductor device | Electricity | 9 | Expired |
| US6695035B2 | Electromagnetic induction casting apparatus | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6702892B2 | Production device for high-quality silicon single crystals | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6994835B2 | Silicon continuous casting method | Chemistry; Metallurgy | 7 | Expired |
| US6878451B2 | Silicon single crystal, silicon wafer, and epitaxial wafer | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7947572B2 | Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulator | Electricity | 7 | Active |
| US7172656B2 | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7273647B2 | Silicon annealed wafer and silicon epitaxial wafer | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6905771B2 | Silicon wafer | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7244306B2 | Method for measuring point defect distribution of silicon single crystal ingot | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6802928B2 | Method for cutting hard and brittle material | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.