Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same
US6641972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Apr 2, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition includes an alkali-soluble novolak resin (A), an alkali-soluble acrylic resin (B) and a quinonediazido-group-containing compound (C) and is used for the formation of a thick film 5 to 100 &mgr;m thick. The ingredient (B) includes 30% to 90% by weight of a unit (b1) derived from a polymerizable compound having an ether bond and 2% to 50% by weight of a unit (b2) derived from a polymerizable compound having a carboxyl group. The composition is applied on a substrate and thereby yields a photoresist film. Likewise, the composition is applied onto a substrate on an electronic part, is patterned, is plated and thereby yields bumps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.