Fin FET devices from bulk semiconductor and method for forming

US6642090B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David M. Fried · Ithaca, US
• Edward J. Nowak · South Burlington, US
• Beth Ann Rainey · Williston, US
• Devendra K. Sadana · Pleasantville, US

Key dates

• Filing date: Jun 3, 2002
• Grant date: Nov 4, 2003
• Expiry date: Jun 3, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6212

Abstract

The present invention thus provides a device structure and method for forming fin Field Effect Transistors (FETs) that overcomes many of the disadvantages of the prior art. Specifically, the device structure and method provides the ability to form finFET devices from bulk semiconductor wafers while providing improved wafer to wafer device uniformity. Specifically, the method facilitates the formation of finFET devices from bulk semiconductor wafers with improved fin height control. Additionally, the method provides the ability to form finFETs from bulk semiconductor while providing isolation between fins and between the source and drain region of individual finFETs. Finally, the method can also provide for the optimization of fin width. The device structure and methods of the present invention thus provide the advantages of uniform finFET fabrication while using cost effect bulk wafers.