Method of manufacturing a flash memory cell
US6642109B2 · kind B2 · utility
23Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
A method of manufacturing a flash memory cell in which an ion implantation process is performed before a cleaning process for etching a protrusion of a trench insulating film to a nipple shape. As a result, the etch rate at a portion except for portions in which a moat will occur along the trench insulating film is increased. Therefore, generation of the moat in the trench insulating film can be prevented and spacing of the floating gate can be optimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.