Process of making dual damascene structures using a sacrificial polymer
US6642138B2 · kind B2 · utility
19Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided to deposit and pattern a sacrificial polymer, and form metal layers. A double hard mask is used to pattern and etch the sacrificial polymer. The double hard mask may be formed at temperatures below 400° C. The sacrificial polymer is capable of being decomposed to become air gaps during annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.