Film forming method and semiconductor device
US6642157B2 · kind B2 · utility
18Cited by
5References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.