MOS transistor with vertical columnar structure
US6642575B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1999 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Dec 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
A field-effect transistor has a vertical columnar structure to restrain a short channel effect without impairing the operating speed of an element. In a semiconductor device having a field-effect transistor with a vertical columnar structure, an n-type diffusion layer region is formed in a surface layer of a p-type silicon substrate. A columnar structure portion is formed in which an n-type silicon layer, a buried insulation film and an n-type silicon layer are stacked over the n-type diffusion layer region and the buried insulation film is set back inward from both silicon layers. A silicon layer is formed over the side surface of the columnar structure portion, and a gate electrode is formed over the surface of the silicon layer with a gate insulation film that is interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.