Magnetic random access memory with low writing current
US6642595B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Sep 4, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic random access memory (MRAM) with a low write current, characterized in that an improved MRAM structure is composed of a plurality of conductive metal pillars disposed on both sides of a magnetic tunnel junction (MTJ) cell functioning as a memory cell. The conductive metal pillars generate a superposed magnetic field so as to reduce the write current into the MTJ cell, thereby reducing the power consumption during the operation of an MRAM. The metal pillars are formed by employing a modified mask so that a plurality of plugs are formed by via etching and metal deposition. Moreover, at least one turn of conductive metal coil is disposed near the memory cell. The enhanced magnetic field thus generated results in a lowered write current as well as reduced power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.