Approach to optimizing an ILD argon sputter process
US6645353B2 · kind B2 · utility
4Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputter etch system and a method of conducting a sputter etch. The sputter etch system includes an etch chamber with a wafer pedestal having a top surface to support a wafer and a magnet configured to provide a continuous magnetic field directed at the top surface of the wafer pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.