Method of forming a thin film
US6645574B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2000 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Dec 6, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A noble method of forming thin films for producing semiconductor or flat panel display devices is disclosed. The method is a way of effectively forming thin films on a substrate even if reactants do not react readily in a time-divisional process gas supply sequence in a reactor by supplying reactant gases and a purge gas cyclically and sequentially in order to prevent gas-phase reactions between the reactant gases and also by generating plasma directly on a substrate synchronously with the process gas supply cycle. The method has advantages of effective thin film formation even if the reactant gases do not react readily, minimization of the purge gas supply time for reduction in process time, reduction of particle contamination during film formation process, as well as thin film formation at low temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.