Method and semiconductor structure for implementing reach through buried interconnect for silicon-on-insulator (SOI) devices

US6645796B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Todd A. Christensen · Rochester, US
• John E. Sheets, II · Zumbrota, US

Key dates

• Filing date: Nov 21, 2001
• Grant date: Nov 11, 2003
• Expiry date: Nov 21, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A method and semiconductor structure including silicon-on-insulator (SOI) devices are provided for implementing reach through buried interconnect. A semiconductor stack includes a predefined buried conductor to be connected through multiple insulator layers and at least one intermediate conductor above the predefined buried conductor. A hole is anisotropically etched through the semiconductor stack to the predefined buried conductor. The etched hole extends through the at least one intermediate conductor and the insulators to the predefined buried conductor in the semiconductor stack. A thin layer of insulator is deposited over an interior of the etched hole. The deposited thin insulator layer is anisotropically etched to remove the deposited thin insulator layer from a bottom of the hole exposing the predefined buried conductor in the semiconductor stack with the thin insulator layer covering sidewalls of the hole to define an insulated opening. The insulated opening is filled with an interconnect conductor to create a connection to the predefined buried conductor in the semiconductor stack. A semiconductor structure for implementing reach through buried interconnect in building s…