Etching for manufacture of semiconductor devices
US6645876B2 · kind B2 · utility
4Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Dec 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.