Film forming method, semiconductor device and manufacturing method of the same
US6645883B2 · kind B2 · utility
12Cited by
0References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.