Charging control and dosimetry system for gas cluster ion beam
US6646277B2 · kind B2 · utility
23Cited by
19References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Dec 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/304
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for gas cluster ion beam (GCIB) processing uses X-Y scanning of the workpiece relative to the GCIB. A neutralizer reduces surface charging of the workpiece by the GCIB. A single Faraday cup sensor is used to measure the GCIB current for dosimetry and scanning control and also to measure and control the degree of surface charging that may be induced in the workpiece during processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.